New High Power GaN Amplifier with Wide Frequency Band Range Announced by Pasternack

Pasternack Launches High Power GaN Amplifier at 100W Saturated Output in 0.7 to 2.7 GHz Range

New Pasternack RF high power GaN amplifier with wide frequency band range announced. This new high power GaN amplifier for RF can be used across a wide range of applications. Radio frequency applications for this new Gallium Nitride solid state power amplifier including electronic warfare, radar, communications, and test and measurement.

PE15A5033F high power GaN RF amp generates 100W typical saturated output power over a broad frequency range that covers 0.7 to 2.7 GHz. This class A/AB amplifier design is unconditionally stable and utilizes highly efficient GaN technology for superior linear performance. The coaxial RF GaN power amplifier supports a variety of input signal formats including CW, AM, FM, PM, and Pulse with power added efficiency (PAE) of 30% typical.

Additional key performance features of this high power RF microwave power amplifier include 45 dB minimum small signal gain, +/- 1.5 dB typical gain flatness @ Psat and an impressive harmonic suppression level of -20 dBc typical. To ensure highly reliable thermal management, the GaN SSPA module incorporates a heatsink and cooling fan that maintains an optimum baseplate temperature of 0°C to +50°C, with automatic shutdown capability at 85°C. The solid state GaN power amplifier package assembly supports SMA-female RF connectors at the input and output ports and a D-Sub connector with control functions that include +30 Vdc bias, current monitoring and TTL logic blanking. Another primary advantage of this GaN solid state RF amplifier is its rugged design platform capable of withstanding harsh environmental conditions including humidity, altitude, shock and vibration.