Hybrid SiC and IGBT Power Module Boosts System Efficiency

Infineon’s EasyPACK 2B module features increased power density and a switching frequency of up to 48 kHz.

Infineon Technologies AG uses the advanced neutral-point-clamped (ANPC) topology for its hybrid silicon-carbide (SiC) and IGBT power module EasyPACK 2B in the 1200-V family. Optimizing for sweet-spot losses of the CoolSiC MOSFET and the TRENCHSTOP IGBT4 chipsets, respectively, the module features increased power density and a switching frequency of up to 48 kHz. This is suitable for the needs of new generation 1500-V photovoltaic and energy storage applications.

Compared with traditional three-level neutral-point-clamped topologies, the ANPC inverter design supports an even loss distribution between semiconductor devices. The new ANPC topology supports a system efficiency of more than 99%, says the company. Implementing the hybrid Easy 2B power module in the dc/ac stage of a 1500-V solar string inverter allows for coils to be smaller than with devices having a lower switching frequency. It therefore weighs significantly less than a corresponding inverter with purely silicon components. Additionally, the losses with SiC are smaller than with silicon. Consequently, less heat has to be dissipated so that the heat sink can also shrink. This leads to smaller inverter housings and cost savings at the system level. Compared with five-level topologies, the three-level design reduces complexity of the inverter design.

The Easy 2B standard package for power modules is characterized by a low stray inductance. The integrated body diode of the CoolSiC MOSFET chip ensures a low-loss freewheeling function without the need for another SiC diode chip, says Infineon. Also, according to the company, while the negative-temperature-coefficient (NTC) temperature sensor facilitates the monitoring of the device, the PressFIT technology reduces assembly time for mounting the device.