1,200-V Gen3 SiC MOSFET Modules Boost Reliability, Lower On-Resistance

SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server power supplies, and energy storage systems.

SemiQ Inc. expanded its family of 1,200-V Gen3 silicon-carbide (SiC) MOSFETs with five SOT-227 modules that offer on-resistance (RDS(on)) values of 7.4, 14.5, and 34 mΩ. The GCMS modules, which feature Schottky barrier diodes (SBDs), have lower switching losses at high temperature. They target medium-voltage, high-power-conversion applications, including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems.

All parts have been engineered to enhance performance and switching speeds while minimizing losses. They’re screened using wafer-level, gate-oxide burn-in tests exceeding 1,400 V and are avalanche tested to 800 mJ (330 mJ for 34-mΩ modules). The 7.4-mΩ GCMX007C120S1-E1 reduces switching losses to 4.66 mJ (3.72-mJ turn-on, 0.94-mJ turn0off) and has a body-diode reverse-recovery charge of 593 nC.

The SOT-227 modules are rugged, easy to mount, and feature an isolated backplate as well as direct mounts for a heatsink. Their junction-to-case thermal resistance ranges from 0.23°C/W for the 7.4-mΩ MOSFET module to 0.70°C/W for the 34-mΩ MOSFET module.