New Shunt Resistors Feature the Industry’s Highest Rated Power in the 5.0mm×2.5mm Size

Novel high heat dissipation structure improves reliability and space saving in automotive and industrial applications

GMR50

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47877 Willich, Germany

ROHM Semiconductor

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ROHM and BASiC Semiconductor Form a Strategic Partnership

Contributing to the technical innovation of new energy vehicles through the development of automotive SiC power devices

Shenzhen BASiC Semiconductor and ROHM have entered into a strategic partnership agreement on SiC power devices for automotive applications. A signing ceremony was held at ROHM’s headquarters in Kyoto to commemorate the occasion. Under this agreement, the two companies will leverage their respective strengths to innovate and improve the performance of SiC power devices a...

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ROHM at electronica 2022: Showcasing Electronic Solutions for the Future

The team of ROHM Semiconductor Europe is looking forward to electronica 2022 – the world’s leading trade fair and conference for electronic components, systems, applications, and solutions.

It will take place between November 15th to 18th in Munich. On its futuristic designed booth C3-520, ROHM experts will present its cutting-edge solutions for the key technologies of our time – revolving around energy-saving, miniaturization, functional safety, innovation, and sustainability. Under its statement “Electronics for the Future” ROHM will demonstrate with mu...

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ROHM’s New MOSFETs

Contributing to Higher Efficiency and Safer Operation with an Original Insulation Structure

ROHM has recently developed a compact, high efficiency 20V Nch MOSFET, RA1C030LD, optimized for switching in small, thin devices, including smartphones and wearables such as wireless earbuds and other hearable equipment.

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