New 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance

Advanced design expected to see widespread adoption in the main drive inverters of EVs

ROHM announces the cutting-edge 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment.

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47877 Willich, Germany

ROHM Semiconductor

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ROHM and BASiC Semiconductor Form a Strategic Partnership

Contributing to the technical innovation of new energy vehicles through the development of automotive SiC power devices

Shenzhen BASiC Semiconductor and ROHM have entered into a strategic partnership agreement on SiC power devices for automotive applications. A signing ceremony was held at ROHM’s headquarters in Kyoto to commemorate the occasion. Under this agreement, the two companies will leverage their respective strengths to innovate and improve the performance of SiC power devices a...

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ROHM’s New MOSFETs

Contributing to Higher Efficiency and Safer Operation with an Original Insulation Structure

ROHM has recently developed a compact, high efficiency 20V Nch MOSFET, RA1C030LD, optimized for switching in small, thin devices, including smartphones and wearables such as wireless earbuds and other hearable equipment.

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ROHM’s New DC/DC Converter IC for ADAS Achieves Best-in-Class-Leading Stable Operation

QuiCur technology remarkably increases the design flexibility for power circuits in increasingly sophisticated automotive applications

ROHM developed the buck DC/DC converter IC with built-in MOSFET (switching regulator), BD9S402MUF-C, for automotive applications such as infotainment and ADAS (Advanced Driver Assistance Systems) incorporating onboard sensors and cameras that are becoming more advanced.

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