ROHM’s High 8V Gate Withstand Voltage Marking Technology Breakthrough for 150V GaN HEMT

Solving the gate breakdown voltage problem of GaN devices contributes to lower power consumption and greater miniaturization of power supplies for base stations and data centers

ROHM developed the industry’s highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices – optimized for power supply circuits in industrial and communication equipment.

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47877 Willich, Germany

ROHM Semiconductor Europe

Keywords

CMOS logic gates

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