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#Product Trends

ROHM’s New Hybrid IGBTs with Built-In SiC Diode

Achieving 67% lower loss and power consumption while improving cost performance

ROHM developed Hybrid IGBTs with integrated 650V SiC Schottky barrier diode, the RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR). The devices are qualified under the AEC-Q101 automotive reliability standard. They are ideal for automotive and industrial applications that handle large power, such as photovoltaic power conditioners, onboard chargers, and DC/DC converters used in electric and electrified vehicles (xEV).

Details

  • 47877 Willich, Germany
  • ROHM Semiconductor Europe