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Aluminum Nitride (AlN) Ceramics for Electronic Packages

Aluminum Nitride (AlN) Ceramics for Electronic Packages

Aluminum Nitride (AlN) is a special technical ceramic as we all know with high thermal conductivity, low dielectric constant, but the unique is its low CTE (coefficient of thermal expansion) close to that of Silicon. This unusual combination of properties makes AlN a critical advanced material for many future applications in electronic packages.

Due to the high thermal conductivity, AlN efficiently releases the heat from high heat generating IC chips. It can easily be laser cut into the thin thickness and complex geometries.

Advantages

High thermal conductivity: 170-230W/M.K, 5-10 times than Alumina

Low dielectric constant

Low CTE (coefficient of thermal expansion)

Excellent electrical insulation

Non-toxic

High temperature resistance: Chemically stable up to 980°C in H2 and CO2 atmospheres, and in the air up to 1380°C

Resistance to corrosion and erosion

General Dimension from INNOVACERA

Square Substrates:

Thickness: 0.385mm, 0.5mm, 0.635mm, 1mm

Length x Width (mm): 50.8 x 50.8, 76.2 x 76.2, 101.6 x 101.6, 114.3 x 114.3

Round Substrates:

Thickness: 1mm, 1.2mm, 1.5mm, 2mm, 2.5mm

Diameter (mm): OD19 * ID16, OD26 * ID20, OD35 * ID30, OD45 * ID40, OD52 * ID50, D60, D75, D80

Applications

5G Communication

LED lighting

HBLED

SMD Encapsulation

Semiconductor

High-power electronics insulators

Microelectronics & Microwave packages

Heat sinks & heat spreaders

Silicon wafer handling and processing

Substrates for electronic packages

Chip carriers for sensors and detectors

Details

  • Xiang'an District, Xiamen, Fujian, China
  • INNOVACERA

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