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TO-3P/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads For MOSFET Transistor IGBT Transistor Heat Sink

Aluminum Nitride Ceramic Thermal Pads For MOSFET Transistor IGBT Transistor Heat Sink

TO-3P/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads For MOSFET Transistor IGBT Transistor Heat Sink

Innovacera Ceramic Thermally Conductive Interface Pads are designed to provide a preferential heat-transfer path between heat-generating components, heat sinks, and other cooling devices. The pads are used to fill air gaps caused by imperfectly flat or smooth surfaces which should be in thermal contact. The pads are made of ceramic materials such as alumina ceramic and aluminum nitride, which help in providing enhanced thermal conductivity and excellent insulation performance. Typical applications include Power Devices, Integrated Circuit (IC) chip packaging heat conduction, MOSFET Transistor, IGBT Transistor Heat Sink, MOS Transistor, heat sink interface, LED board Thermal Interface Material (TIM), Chip ON Film (COF) heat conduction.

AlN Ceramic Thermal Pads

Details

  • Xiamen, Fujian, China
  • Xiamen Innovacera Advanced Materials Co., Ltd

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