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Aluminum nitride (AlN) Substrates

high thermal conductivity ceramic substrate

Innovacera’s Aluminum Nitride (AlN) Substrates deliver exceptional thermal conductivity, a thermal expansion coefficient closely matched to silicon, and excellent electrical insulation, making them an ideal choice for high-power electronic applications. With superior mechanical strength, high breakdown voltage, and outstanding thermal shock resistance, AlN substrates ensure reliable performance in demanding environments. Their precision machining capability and customizable specifications make them well-suited for IGBT power modules, high-power LEDs, and advanced heat dissipation components.

Features
• High thermal conductivity
• Thermal expansion coefficient close to silicon wafer
• High breakdown voltage

Application
• High power IGBT power module
• High-power LED
• High power heat sink

Details

  • 588 Jia He Lu, Hu Li Qu, Xia Men Shi, Fu Jian Sheng, China, 361015
  • Xiamen Innovacera Advanced Materials Co., Ltd